Images are for reference only.
See Product Specifications for product details.
| Part Number | 10A05-T |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 10A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | R6, Axial |
| Supplier Device Package | R-6 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
10A01-T | Diodes Incorporated | DIODE GEN PURP 50V 10A R6 | - | 500 | Details |
 |
10A01-TP | Micro Commercial Co | DIODE GEN PURP 50V R-6 | - | 0 | Details |
|
10A015 | Microsemi Corporation | TRANS RF BIPO 6W 750MA 55FT2 | - | 0 | Details |
 |
10A02-T | Diodes Incorporated | DIODE GEN PURP 100V 10A R6 | - | 15457 | Details |
|
10A030 | Microsemi Corporation | TRANS RF BIPO 13W 1.5A 55FT2 | - | 0 | Details |
 |
10A04-T | Diodes Incorporated | DIODE GEN PURP 400V 10A R6 | - | 18500 | Details |
 |
10A05-T | Diodes Incorporated | DIODE GEN PURP 600V 10A R6 | - | 3500 | Details |
 |
10A06-T | Diodes Incorporated | DIODE GEN PURP 800V 10A R6 | - | 0 | Details |
|
10A060 | Microsemi Corporation | TRANS RF BIPO 21W 3A 55FT-2 | - | 0 | Details |
 |
10A07-T | Diodes Incorporated | DIODE GEN PURP 1KV 10A R6 | - | 89500 | Details |
 |
10AS016C3U19E2LG | Altera | IC SOC FPGA 192 I/O 484UBGA | - | 0 | Details |
|
10AS016C3U19E2SG | Altera | IC SOC FPGA 192 I/O 484UBGA | - | 0 | Details |