SIS407DN-T1-GE3

MOSFET P-CH 20V 25A 1212-8 PPAK
SIS407DN-T1-GE3 P1
SIS407DN-T1-GE3 P1
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Vishay Siliconix ~ SIS407DN-T1-GE3

Part Number
SIS407DN-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 20V 25A 1212-8 PPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIS407DN-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 21000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SIS407DN-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93.8nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 15.3A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8

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