Images are for reference only.
See Product Specifications for product details.
| Part Number | EGF1BHE3_A/H |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 1µA @ 100V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214BA |
| Supplier Device Package | DO-214BA (GF1) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
EGF1A | Fairchild/ON Semiconductor | DIODE GEN PURP 50V 1A SMA | - | 22500 | Details |
 |
EGF1A-E3/5CA | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO214BA | - | 0 | Details |
 |
EGF1A-E3/67A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO214BA | - | 3000 | Details |
 |
EGF1AHE3/5CA | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO214BA | - | 0 | Details |
 |
EGF1AHE3/67A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO214BA | - | 0 | Details |
|
EGF1AHE3_A/H | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO214BA | - | 324434 | Details |
|
EGF1AHE3_A/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO214BA | - | 324434 | Details |
 |
EGF1B | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 1A SMA | - | 7500 | Details |
 |
EGF1B-1HE3/5CA | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214BA | - | 268 | Details |
 |
EGF1B-1HE3/67A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214BA | - | 268 | Details |
 |
EGF1B-E3/5CA | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214BA | - | 0 | Details |
 |
EGF1B-E3/67A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214BA | - | 0 | Details |