Images are for reference only.
See Product Specifications for product details.
| Part Number | N06DB102J |
|---|---|
| Part Status | Obsolete |
| Type | - |
| Material - Core | - |
| Inductance | 1mH |
| Tolerance | ±5% |
| Current Rating | 160mA |
| Current - Saturation | - |
| Shielding | Unshielded |
| DC Resistance (DCR) | 8.2 Ohm Max |
| Q @ Freq | - |
| Frequency - Self Resonant | 2.1MHz |
| Ratings | - |
| Operating Temperature | -25°C ~ 105°C |
| Frequency - Test | 1kHz |
| Features | - |
| Mounting Type | Surface Mount |
| Package / Case | Nonstandard |
| Supplier Device Package | - |
| Size / Dimension | 0.295" L x 0.287" W (7.50mm x 7.30mm) |
| Height - Seated (Max) | 0.126" (3.20mm) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
N06 080 0003 1 | Amphenol Sine Systems Corp | CELLULAR RUBBER GASKET | - | 0 | Details |
 |
N06 080 0003 2 | Amphenol Sine Systems Corp | CELLULAR RUBBER GASKET | - | 0 | Details |
 |
N06 080 0003 3 | Amphenol Sine Systems Corp | CELLULAR RUBBER GASKET | - | 0 | Details |
 |
N06 080 0003 4 | Amphenol Sine Systems Corp | CELLULAR RUBBER GASKET | - | 0 | Details |
 |
N0601N-ZK-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 100A TO-263 | - | 0 | Details |
|
N0602N-S19-AY | Renesas Electronics America | MOSFET N-CH 60V 100A TO-220 | - | 0 | Details |
|
N0603N-S23-AY | Renesas Electronics America | MOSFET N-CH 60V 100A TO-262 | - | 0 | Details |
|
N0604N-S19-AY | Renesas Electronics America | MOSFET N-CH 60V 82A TO-220 | - | 0 | Details |
|
N06DB100K | Taiyo Yuden | FIXED IND 10UH 1.7A 79 MOHM SMD | 0 | Details | |
|
N06DB101K | Taiyo Yuden | FIXED IND 100UH 600MA 680 MOHM | 0 | Details | |
|
N06DB102J | Taiyo Yuden | FIXED IND 1MH 160MA 8.2 OHM SMD | 0 | Details | |
|
N06DB150K | Taiyo Yuden | FIXED IND 15UH 1.3A 120 MOHM SMD | 0 | Details |