Images are for reference only.
See Product Specifications for product details.
| Part Number | S1JM RSG |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 780ns |
| Current - Reverse Leakage @ Vr | 1µA @ 600V |
| Capacitance @ Vr, F | 5pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 2-SMD, Flat Lead |
| Supplier Device Package | Micro SMA |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
S1J | Fairchild/ON Semiconductor | DIODE GEN PURP 600V 1A SMA | - | 37500 | Details |
|
S1J M2G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO214AC | - | 1361872 | Details |
|
S1J R3G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO214AC | - | 1041432 | Details |
 |
S1J-13 | Diodes Incorporated | DIODE GEN PURP 600V 1A SMA | 0 | Details | |
 |
S1J-13-F | Diodes Incorporated | DIODE GEN PURP 600V 1A SMA | - | 154000 | Details |
 |
S1J-E3/51T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | 0 | Details | |
 |
S1J-E3/5AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | - | 0 | Details |
 |
S1J-E3/61T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | - | 90000 | Details |
|
S1J-F | SMC Diode Solutions | SMT GLASS PASSIVATED RECTIFIER | - | 25822 | Details |
|
S1J-JR2 | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 8406 | Details |
|
S1J-JR3 | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 25809 | Details |
|
S1J-KR2G | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 1769008 | Details |