VS-GT300YH120N

IGBT 1200V 341A 1042W DIAP
VS-GT300YH120N P1
VS-GT300YH120N P1
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Vishay Semiconductor Diodes Division ~ VS-GT300YH120N

Part Number
VS-GT300YH120N
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 1200V 341A 1042W DIAP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-GT300YH120N PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number VS-GT300YH120N
Part Status Active
IGBT Type Trench
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 341A
Power - Max 1042W
Vce(on) (Max) @ Vge, Ic 2.17V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max) 300µA
Input Capacitance (Cies) @ Vce 36nF @ 30V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 8)
Supplier Device Package Double INT-A-PAK

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