VS-GB90SA120U

TRANSISTOR INSLTED GATE BIPOLAR
VS-GB90SA120U P1
VS-GB90SA120U P1
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Vishay Semiconductor Diodes Division ~ VS-GB90SA120U

Part Number
VS-GB90SA120U
Manufacturer
Vishay Semiconductor Diodes Division
Description
TRANSISTOR INSLTED GATE BIPOLAR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-GB90SA120U PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 6 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number VS-GB90SA120U
Part Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 149A
Power - Max 862W
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Current - Collector Cutoff (Max) 250µA
Input Capacitance (Cies) @ Vce -
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4
Supplier Device Package SOT-227

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