IRFD224

MOSFET N-CH 250V 630MA 4-DIP
IRFD224 P1
IRFD224 P1
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Vishay Siliconix ~ IRFD224

Part Number
IRFD224
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 250V 630MA 4-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IRFD224 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IRFD224
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 630mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 380mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)

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