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Toshiba Semiconductor and Storage ~ TPC8066-H,LQ(S

Part Number	TPC8066-H,LQ(S
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	16 mOhm @ 5.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)

Part Number	Manufacturers	Description	PDF	View
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TPC8021-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A SOP8 2-6J1B		Details
TPC8022-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 7.5A SOP8 2-6J1B		Details
TPC8026(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 13A 8-SOIC		Details
TPC8031-H(TE12LQM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A SOP8 2-6J1B		Details
TPC8032-H(TE12LQM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 15A SOP8 2-6J1B		Details
TPC8033-H(TE12LQM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 17A SOP8 2-6J1B		Details
TPC8035-H(TE12L,QM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 18A SOP8 2-6J1B		Details
TPC8036-H(TE12L,QM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 18A 8-SOIC	-	Details
TPC8038-H(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 12A SOP8 2-6J1B		Details