STI26NM60N

MOSFET N-CH 600V 20A I2PAK
STI26NM60N P1
STI26NM60N P1
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STMicroelectronics ~ STI26NM60N

Part Number
STI26NM60N
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 20A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
STI26NM60N.pdf STI26NM60N PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 960 pcs
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Product Parameter

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Part Number STI26NM60N
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Rds On (Max) @ Id, Vgs 165 mOhm @ 10A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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