STI11NM80

MOSFET N-CH 800V 11A I2PAK-3
STI11NM80 P1
STI11NM80 P1
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STMicroelectronics ~ STI11NM80

Part Number
STI11NM80
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 800V 11A I2PAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STI11NM80 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number STI11NM80
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 5.5A, 10V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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