NTD4909N-1G

MOSFET N-CH 30V 41A SGL IPAK
NTD4909N-1G P1
NTD4909N-1G P1
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ON Semiconductor ~ NTD4909N-1G

Part Number
NTD4909N-1G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 30V 41A SGL IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTD4909N-1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTD4909N-1G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.37W (Ta), 29.4W (Tc)
Rds On (Max) @ Id, Vgs 8 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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