Images are for reference only.
See Product Specifications for product details.
| Part Number | BSP62,115 |
|---|---|
| Part Status | Active |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Power - Max | 1.25W |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BSP 51 E6327 | Infineon Technologies | TRANS NPN DARL 60V 1A SOT-223 | - | 2000 | Details |
 |
BSP 52 E6327 | Infineon Technologies | TRANS NPN DARL 80V 1A SOT-223 | - | 0 | Details |
 |
BSP 60 E6433 | Infineon Technologies | TRANS PNP DARL 45V 1A SOT-223 | - | 0 | Details |
 |
BSP030,115 | Nexperia USA Inc. | MOSFET N-CH 30V 10A SOT223 | - | 0 | Details |
 |
BSP100,135 | Nexperia USA Inc. | MOSFET N-CH 30V 3.2A SOT223 | - | 0 | Details |
 |
BSP110,115 | Nexperia USA Inc. | MOSFET N-CH 100V 520MA SOT223 | - | 0 | Details |
 |
BSP122,115 | Nexperia USA Inc. | MOSFET N-CH 200V 0.55A SOT223 | 1000 | Details | |
 |
BSP123E6327T | Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | - | 0 | Details |
 |
BSP123L6327HTSA1 | Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | - | 0 | Details |
 |
BSP125 E6327 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | - | 0 | Details |
 |
BSP125 E6433 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | - | 0 | Details |
 |
BSP125H6327XTSA1 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | 1000 | Details |