Images are for reference only.
See Product Specifications for product details.
| Part Number | JAN2N2432 |
|---|---|
| Part Status | Discontinued at Digi-Key |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1mA, 5V |
| Power - Max | 360mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 (TO-206AA) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
JAN1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | - | 0 | Details |
|
JAN1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | - | 0 | Details |
|
JAN1N1186R | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | - | 0 | Details |
 |
JAN1N1188 | Microsemi Corporation | DIODE GEN PURP 400V 35A DO5 | - | 1 | Details |
|
JAN1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | - | 0 | Details |
|
JAN1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | - | 0 | Details |
|
JAN1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | - | 0 | Details |
|
JAN1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
|
JAN1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
|
JAN1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 0 | Details |
|
JAN1N1204AR | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 0 | Details |
|
JAN1N1206A | Microsemi Corporation | DIODE GEN PURP 600V 12A DO203AA | - | 0 | Details |