JAN1N5420US

DIODE GEN PURP 600V 3A D5B
JAN1N5420US P1
JAN1N5420US P1
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Microsemi Corporation ~ JAN1N5420US

Part Number
JAN1N5420US
Manufacturer
Microsemi Corporation
Description
DIODE GEN PURP 600V 3A D5B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
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Family
Diodes - Rectifiers - Single
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Product Parameter

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Part Number JAN1N5420US
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 400ns
Current - Reverse Leakage @ Vr 1µA @ 600V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Supplier Device Package D-5B
Operating Temperature - Junction -65°C ~ 175°C

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