APTM120H29FG

MOSFET 4N-CH 1200V 34A SP6
APTM120H29FG P1
APTM120H29FG P1
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Microsemi Corporation ~ APTM120H29FG

Part Number
APTM120H29FG
Manufacturer
Microsemi Corporation
Description
MOSFET 4N-CH 1200V 34A SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APTM120H29FG PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 9 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number APTM120H29FG
Part Status Active
FET Type 4 N-Channel (H-Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 34A
Rds On (Max) @ Id, Vgs 348 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10300pF @ 25V
Power - Max 780W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP6
Supplier Device Package SP6

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