APT50GR120JD30

IGBT 1200V 84A 417W SOT227
APT50GR120JD30 P1
APT50GR120JD30 P1
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Microsemi Corporation ~ APT50GR120JD30

Part Number
APT50GR120JD30
Manufacturer
Microsemi Corporation
Description
IGBT 1200V 84A 417W SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APT50GR120JD30 PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number APT50GR120JD30
Part Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 84A
Power - Max 417W
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 50A
Current - Collector Cutoff (Max) 1.1mA
Input Capacitance (Cies) @ Vce 5.55nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4
Supplier Device Package SOT-227

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