APT31M100B2

MOSFET N-CH 1000V 32A T-MAX
APT31M100B2 P1
APT31M100B2 P1
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Microsemi Corporation ~ APT31M100B2

Part Number
APT31M100B2
Manufacturer
Microsemi Corporation
Description
MOSFET N-CH 1000V 32A T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APT31M100B2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number APT31M100B2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8500pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 1040W (Tc)
Rds On (Max) @ Id, Vgs 380 mOhm @ 16A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package T-MAX™ [B2]
Package / Case TO-247-3 Variant

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