Images are for reference only.
See Product Specifications for product details.
| Part Number | 1N824-E3 |
|---|---|
| Part Status | Active |
| Voltage - Zener (Nom) (Vz) | 6.2V |
| Tolerance | ±5% |
| Power - Max | 500mW |
| Impedance (Max) (Zzt) | 15 Ohm |
| Current - Reverse Leakage @ Vr | 2µA @ 3V |
| Voltage - Forward (Vf) (Max) @ If | - |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
1N8024-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | 9 | Details | |
 |
1N8026-GA | GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | 1 | Details | |
 |
1N8028-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | 0 | Details | |
 |
1N8030-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | 9 | Details | |
 |
1N8031-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | 0 | Details | |
 |
1N8032-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | 4 | Details | |
 |
1N8033-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | 0 | Details | |
 |
1N8034-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | 0 | Details | |
 |
1N8035-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | 2 | Details | |
 |
1N8147 | Microsemi Corporation | TVS DIODE | - | 3023 | Details |
|
1N8147US | Microsemi Corporation | TVS DIODE | - | 3002 | Details |
|
1N8148 | Microsemi Corporation | TVS DIODE | - | 3023 | Details |