Images are for reference only.
See Product Specifications for product details.
| Part Number | 1N5809US |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
1N5059GP-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | - | 8000 | Details |
 |
1N5059GPHE3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | - | 0 | Details |
 |
1N5059TAP | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 2A SOD57 | - | 0 | Details |
 |
1N5059TR | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 2A SOD57 | - | 0 | Details |
 |
1N5060 TR | Central Semiconductor Corp | DIODE GEN PURP 400V 1A GPR-1A | - | 0 | Details |
 |
1N5060GP-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AC | - | 8000 | Details |
 |
1N5060GP-E3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AC | - | 0 | Details |
 |
1N5060GPHE3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AC | - | 0 | Details |
 |
1N5060GPHE3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO204AC | - | 0 | Details |
|
1N5060TAP | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 2A SOD57 | - | 0 | Details |
 |
1N5060TR | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 2A SOD57 | - | 20000 | Details |
 |
1N5061 TR | Central Semiconductor Corp | DIODE GEN PURP 600V 1A GPR-1A | - | 0 | Details |