IXTA8N65X2

MOSFET N-CH 650V 8A X2 TO-263
IXTA8N65X2 P1
IXTA8N65X2 P1
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IXYS ~ IXTA8N65X2

Part Number
IXTA8N65X2
Manufacturer
IXYS
Description
MOSFET N-CH 650V 8A X2 TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTA8N65X2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 84 pcs
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Product Parameter

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Part Number IXTA8N65X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 500 mOhm @ 4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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