IXFT21N50Q

MOSFET N-CH 500V 21A TO-268
IXFT21N50Q P1
IXFT21N50Q P1
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IXYS ~ IXFT21N50Q

Part Number
IXFT21N50Q
Manufacturer
IXYS
Description
MOSFET N-CH 500V 21A TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFT21N50Q PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFT21N50Q
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 280W (Tc)
Rds On (Max) @ Id, Vgs 250 mOhm @ 10.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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