IRF6603

MOSFET N-CH 30V 27A DIRECTFET
IRF6603 P1
IRF6603 P2
IRF6603 P1
IRF6603 P2
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Infineon Technologies ~ IRF6603

Part Number
IRF6603
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 27A DIRECTFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRF6603.pdf IRF6603 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IRF6603
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 6590pF @ 15V
Vgs (Max) +20V, -12V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs 3.4 mOhm @ 25A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT

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