IPW65R041CFD

MOSFET N CH 650V 68.5A PG-TO247
IPW65R041CFD P1
IPW65R041CFD P1
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Infineon Technologies ~ IPW65R041CFD

Part Number
IPW65R041CFD
Manufacturer
Infineon Technologies
Description
MOSFET N CH 650V 68.5A PG-TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPW65R041CFD PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 1099 pcs
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Product Parameter

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Part Number IPW65R041CFD
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 41 mOhm @ 33.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3

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