Images are for reference only.
See Product Specifications for product details.
| Part Number | BSC0910NDIATMA1 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A, 31A |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 12V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TISON-8 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BSC0901NS | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | - | 0 | Details |
 |
BSC0901NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | - | 122592 | Details |
 |
BSC0901NSI | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | - | 0 | Details |
 |
BSC0901NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | - | 120044 | Details |
 |
BSC0902NS | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | - | 0 | Details |
 |
BSC0902NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | - | 150057 | Details |
 |
BSC0902NSI | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | - | 15000 | Details |
 |
BSC0902NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | - | 144054 | Details |
 |
BSC0904NSI | Infineon Technologies | MOSFET N-CH 30V 20A 8TDSON | - | 5000 | Details |
 |
BSC0904NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 20A 8TDSON | - | 208708 | Details |
 |
BSC0906NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 18A 8TDSON | - | 0 | Details |
 |
BSC0908NSATMA1 | Infineon Technologies | MOSFET N-CH 34V 49A 8TDSON | 0 | Details |