Images are for reference only.
See Product Specifications for product details.
| Part Number | FQD12P10TF |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 4.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
FQD10N20CTF | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.8A DPAK | - | 0 | Details |
 |
FQD10N20CTM | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.8A DPAK | - | 22500 | Details |
 |
FQD10N20CTM_F080 | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.8A DPAK | - | 0 | Details |
 |
FQD10N20LTF | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | - | 0 | Details |
 |
FQD10N20LTM | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | - | 15000 | Details |
 |
FQD10N20TF | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | 0 | Details | |
 |
FQD10N20TM | Fairchild/ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | 0 | Details | |
 |
FQD11P06TF | Fairchild/ON Semiconductor | MOSFET P-CH 60V 9.4A DPAK | - | 0 | Details |
 |
FQD11P06TM | Fairchild/ON Semiconductor | MOSFET P-CH 60V 9.4A DPAK | - | 50000 | Details |
 |
FQD12N20LTF | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | - | 0 | Details |
 |
FQD12N20LTM | Fairchild/ON Semiconductor | MOSFET N-CH 200V 9A DPAK | - | 0 | Details |
 |
FQD12N20LTM-F085 | ON Semiconductor | MOSFET N-CH 200V 9A DPAK | - | 69006 | Details |