EPC2100ENGRT

MOSFET ARRAY 2N-CH 30V DIE
EPC2100ENGRT P1
EPC2100ENGRT P1
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See Product Specifications for product details.

EPC ~ EPC2100ENGRT

Part Number
EPC2100ENGRT
Manufacturer
EPC
Description
MOSFET ARRAY 2N-CH 30V DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EPC2100ENGRT PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 6500 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number EPC2100ENGRT
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tj), 38A (Tj)
Rds On (Max) @ Id, Vgs 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA,2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 15V, 15nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 15V, 1700pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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