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See Product Specifications for product details.
Part Number | EPC2016 |
---|---|
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 50V |
Vgs (Max) | +6V, -5V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |