ZXMN2A04DN8TC

MOSFET 2N-CH 20V 5.9A 8SOIC
ZXMN2A04DN8TC P1
ZXMN2A04DN8TC P1
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Diodes Incorporated ~ ZXMN2A04DN8TC

Part Number
ZXMN2A04DN8TC
Manufacturer
Diodes Incorporated
Description
MOSFET 2N-CH 20V 5.9A 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- ZXMN2A04DN8TC PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number ZXMN2A04DN8TC
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.9A
Rds On (Max) @ Id, Vgs 25 mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V
Power - Max 1.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP

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