DMN2016UTS-13

MOSFET 2N-CH 20V 8.58A 8-TSSOP
DMN2016UTS-13 P1
DMN2016UTS-13 P1
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Diodes Incorporated ~ DMN2016UTS-13

Part Number
DMN2016UTS-13
Manufacturer
Diodes Incorporated
Description
MOSFET 2N-CH 20V 8.58A 8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMN2016UTS-13 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 10000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number DMN2016UTS-13
Part Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.58A
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 10V
Power - Max 880mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP

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