Images are for reference only.
See Product Specifications for product details.
| Part Number | 1N4448HLP-7 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 125mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 100nA @ 80V |
| Capacitance @ Vr, F | 3pF @ 0.5V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 2-UFDFN |
| Supplier Device Package | X1-DFN1006-2 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
1N4436 | Microsemi Corporation | SINGLE PHASE BRIDGE RECTIFIER | - | 1183 | Details |
|
1N4437_FT | Microsemi Corporation | BRIDGE RECT 1PHASE 400V TO-3 | - | 0 | Details |
|
1N4444-1 | Microsemi Corporation | DIODE SWITCHING | - | 0 | Details |
 |
1N4446 | Microsemi Corporation | DIODE GEN PURP 75V 200MA DO35 | 0 | Details | |
|
1N4446 BK | Central Semiconductor Corp | DIODE GEN PURP 100V 150MA DO35 | 0 | Details | |
|
1N4446 TR | Central Semiconductor Corp | DIODE GEN PURP 100V 150MA DO35 | - | 0 | Details |
 |
1N4446TR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | 0 | Details | |
 |
1N4446_T50R | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | 0 | Details | |
 |
1N4447 | Fairchild/ON Semiconductor | DIODE GEN PURP 100V DO35 | - | 3195 | Details |
 |
1N4447TR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V DO35 | - | 0 | Details |
 |
1N4448 | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 8637 | Details |
|
1N4448 A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 150MA DO35 | - | 5133294 | Details |