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| Número de pieza | VS-ETF075Y60U |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | Trench |
| Configuración | Three Level Inverter |
| Voltaje: ruptura del emisor del colector (máximo) | 600V |
| Current - Collector (Ic) (Max) | 109A |
| Potencia - Max | 294W |
| Vce (on) (Max) @ Vge, Ic | 1.93V @ 15V, 75A |
| Corriente - corte de colector (máximo) | 100µA |
| Capacitancia de entrada (Cies) @ Vce | 4.44nF @ 30V |
| Entrada | Standard |
| Termistor NTC | Yes |
| Temperatura de funcionamiento | 175°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | EMIPAK-2B |
| Paquete de dispositivo del proveedor | EMIPAK-2B |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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VS-ETF075Y60U | Vishay Semiconductor Diodes Division | IGBT 600V 109A 294W EMIPAK-2B | - | 15 | Detalles |
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VS-ETF150Y65N | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | - | 9 | Detalles |
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VS-ETF150Y65U | Vishay Semiconductor Diodes Division | IGBT 650V 150A EMIPAK-2B | - | 15 | Detalles |
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VS-ETH0806-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | - | 940 | Detalles |
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VS-ETH0806FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220-2 | - | 994 | Detalles |
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VS-ETH1506-1HM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A TO-262 | - | 0 | Detalles |
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VS-ETH1506-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220-2 | - | 573 | Detalles |
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VS-ETH1506FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A TO220FP | - | 990 | Detalles |
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VS-ETH1506S-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 15A D2PAK | - | 590 | Detalles |
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VS-ETH1506SHM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | - | 0 | Detalles |
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VS-ETH1506STRL-M3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | - | 0 | Detalles |
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VS-ETH1506STRLHM3 | Vishay Semiconductor Diodes Division | DIODE HYPERFAST 15A D2PAK | - | 0 | Detalles |