Images are for reference only.
See Product Specifications for product details.
| Part Number | SSM6L35FU(TE85L,F) |
|---|---|
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 50mA, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SSM6L35FE,LM | Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | 8000 | Details |
 |
SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A US6 | - | 0 | Details |
 |
SSM6L36FE,LM | Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | 4000 | Details |
 |
SSM6L39TU,LF | Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | 0 | Details |