GT50J121(Q)

IGBT 600V 50A 240W TO3P LH
GT50J121(Q) P1
GT50J121(Q) P1
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Toshiba Semiconductor and Storage ~ GT50J121(Q)

Part Number
GT50J121(Q)
Manufacturer
Toshiba Semiconductor and Storage
Description
IGBT 600V 50A 240W TO3P LH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GT50J121(Q).pdf GT50J121(Q) PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number GT50J121(Q)
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Power - Max 240W
Switching Energy 1.3mJ (on), 1.34mJ (off)
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 90ns/300ns
Test Condition 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(LH)

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