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See Product Specifications for product details.
Part Number | CPMF-1200-S080B |
---|---|
Part Status | Obsolete |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |
Drive Voltage (Max Rds On,Min Rds On) | 20V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 90.8nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 1915pF @ 800V |
Vgs (Max) | +25V, -5V |
FET Feature | - |
Power Dissipation (Max) | 313mW (Tj) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 20A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |