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Vishay Semiconductor Diodes Division ~ BYG21M-E3/TR

Part Number	BYG21M-E3/TR
Part Status	Active
Diode Type	Avalanche
Voltage - DC Reverse (Vr) (Max)	1000V
Current - Average Rectified (Io)	1.5A
Voltage - Forward (Vf) (Max) @ If	1.6V @ 1.5A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	120ns
Current - Reverse Leakage @ Vr	1µA @ 1000V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	DO-214AC (SMA)
Operating Temperature - Junction	-55°C ~ 150°C

Part Number	Manufacturers	Description	PDF	In Stock	View
BYG20D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	-	740667	Details
BYG20D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	-	666600	Details
BYG20D-E3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A	-	9000	Details
BYG20D-E3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A	-	0	Details
BYG20D-M3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A	-	0	Details
BYG20D-M3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A	-	0	Details
BYG20DHE3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA	-	0	Details
BYG20DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA	-	0	Details
BYG20DHM3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA	-	0	Details
BYG20DHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA	-	0	Details
BYG20G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	-	740667	Details
BYG20G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	-	592534	Details