IXFN80N50Q3

MOSFET N-CH 500V 63A SOT-227
IXFN80N50Q3 P1
IXFN80N50Q3 P1
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IXYS ~ IXFN80N50Q3

Part Number
IXFN80N50Q3
Manufacturer
IXYS
Description
MOSFET N-CH 500V 63A SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFN80N50Q3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 10 pcs
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Product Parameter

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Part Number IXFN80N50Q3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 63A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 780W (Tc)
Rds On (Max) @ Id, Vgs 65 mOhm @ 40A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

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